dmn2027uss document number: ds35038 rev. 4 - 2 1 of 7 www.diodes.com february 2015 ? diodes incorporated dmn 2027 u ss new product advance information new product 20v n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 20v 12.5m @ v gs = 4.5v 10.5 a 19m @ v gs = 2.5v 8.5 a description and applications this mosfet is designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high-efficiency power management applicat ions. ? backlighting ? power management functions ? dc-dc converters features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: so-8 ? case material: molded plastic, "green" molding com pound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.076 grams (approximate) ordering information (note 4) part number case packaging dmn2027uss-13 so-8 2,500/tape & reel notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at htt p://www.diodes.com/products/packages.html. marking information so-8 so-8 top view d s g equivalent circuit pin1 d s s s g d d d top view pin configuration = manufacturer?s marking n2027us = product type marking code yyww = date code marking yy or yy = year (ex: 15 = 2015) ww = week (01 - 53) 1 4 8 5 n3016ls ww yy n2027us
dmn2027uss document number: ds35038 rev. 4 - 2 2 of 7 www.diodes.com february 2015 ? diodes incorporated dmn 2027 u ss new product advance information new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain current (note 6) v gs = 4.5v steady state t a = +25c t a = +70c i d 10.5 8.4 a t<10s t a = +25c t a = +70c i d 13.4 10.7 a continuous drain current (note 6) v gs = 2.5v steady state t a = +25c t a = +70c i d 8.5 6.8 a t<10s t a = +25c t a = +70c i d 10.9 8.7 a maximum continuous body diode forward current (note 6) i s 6.0 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 45.0 a avalanche current (note 7) l = 0.1mh i a s 7.8 a avalanche energy (note 7) l = 0.1mh e a s 3.0 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 1.5 w thermal resistance, junction to ambient (note 5) steady state r ja 82 c/w t<10s 48 c/w total power dissipation (note 6) p d 2.0 w thermal resistance, junction to ambient (note 6) steady state r ja 60 c/w t<10s 37 c/w thermal resistance, junction to case r j c 6.4 c/w operating and storage temperature range t j, t stg -55 to 150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain-source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250 a zero gate voltage drain current i dss - - 1.0 a v ds = 20v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 12v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 0.7 ? 1.3 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? ? 12.5 m v gs = 4.5v, i d = 9.4a ? ? 19 v gs = 2.5v, i d = 8.3a diode forward voltage v sd ? 0.7 1.3 v v gs = 0v, i s = 1.3a dynamic characteristics (note 9 ) input capacitance c iss ? 1,000 ? pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 166 ? reverse transfer capacitance c rss ? 158 ? gate resistance r g ? 1.51 3.2 v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 2.5v) q g ? 7.0 ? nc v ds = 10v, i d = 9.4a total gate charge (v gs = 4.5v) q g ? 11.6 ? gate-source charge q gs ? 2.7 ? gate-drain charge q gd ? 3.4 ? turn-on delay time t d(on) ? 11.67 ? ns v gs = 4.5v, v ds = 10v, r g = 6 , i d = 1a turn-on rise time t r ? 12.49 ? turn-off delay time t d(off) ? 35.89 ? turn-off fall time t f ? 12.33 ? reverse recovery time t rr ? 10.8 ? ns i f = 12a, di/dt = 500a/s reverse recovery charge q rr ? 5.8 ? nc notes: 5. device mounted on fr-4 substrate pc board , 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz c opper, with 1inch square copper plate. 7. i as and e as rating are based on low frequency and duty cycles to keep t j = 25c. 8. short duration pulse test used to minimize self- heating effect. 9. guaranteed by design. not subject to product tes ting.
dmn2027uss document number: ds35038 rev. 4 - 2 3 of 7 www.diodes.com february 2015 ? diodes incorporated dmn 2027 u ss new product advance information new product thermal characteristics 100m 1 10 1m 10m 100m 1 10 25mm x 25mm 1oz fr4 single pulse t amb =25c r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25mm x 25mm 1oz fr4 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w) 0 5 10 15 20 25 30 0 0.5 1 1.5 2 fig. 1 typical output characteristic v , drain-source voltage (v) ds i , d r a i n c u r r e n t ( a ) d v = 2.0v gs v = 1.8v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 3.5v gs v = 4.0v gs v = 10v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs 0 5 10 15 20 i , d r a i n c u r r e n t ( a ) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a
dmn2027uss document number: ds35038 rev. 4 - 2 4 of 7 www.diodes.com february 2015 ? diodes incorporated dmn 2027 u ss new product advance information new product 0 0.005 0.010 0.015 0.020 0.025 0.030 0 5 10 15 20 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) v = 4.5v gs v = 2.5v gs 0 0.005 0.010 0.015 0.020 0.025 0.030 0 5 10 15 20 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1.0 1.2 1.4 1.6 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e on-resistance (normalized) dson v = 2.5v i = 5a gs d v = 4.5v i = 10a gs d 0 0.005 0.010 0.015 0.020 0.025 0.030 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e on-resistance (normalized) dson v = 4.5v i = 10a gs d v = 2.5v i = 5a gs d 0 0.5 1.0 1.5 2.0 2.5 3.0 fig. 7 gate threshold variation vs. ambient tempera ture -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , g a t e t h r e s h o l d v o l t a g e ( v ) gs(th) i = 250a d i = 1ma d 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i , s o u r c e c u r r e n t ( a ) s t = 25c a
dmn2027uss document number: ds35038 rev. 4 - 2 5 of 7 www.diodes.com february 2015 ? diodes incorporated dmn 2027 u ss new product advance information new product 10 100 1,000 10,000 f = 1mhz 0 5 10 15 20 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) c iss c rss c oss 0 5 10 15 20 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 i , l e a k a g e c u r r e n t ( n a ) dss 10,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 2 4 6 8 10 0 5 10 15 20 25 30 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , g a t e - s o u r c e v o l t a g e ( v ) gs v = 15v i = 9.4a ds d
dmn2027uss document number: ds35038 rev. 4 - 2 6 of 7 www.diodes.com february 2015 ? diodes incorporated dmn 2027 u ss new product advance information new product package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. so - 8 x c1 c2 y dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 so - 8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ? 0 8 all dimensions in mm gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254
dmn2027uss document number: ds35038 rev. 4 - 2 7 of 7 www.diodes.com february 2015 ? diodes incorporated dmn 2027 u ss new product advance information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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